FREE RUNNING DRO

This page provides information on our Free Running Dielectric Resonator Oscillator (DRO) series DRO-1000 FREE RUNNING DRO.

DRO-1000 Photo Features
Application
Description
Specifications
Phase Noise Envelope
Block Diagram
Outline Diagram









 

FEATURES
DIELECTRIC RESONATOR
INTERNAL VOLTAGE REGULATOR
150 MHz BANDWIDTH
LOW PHASE NOISE
MIC FABRICATION ON ALUMINA CIRCUIT BOARD
LOW MICROPHONICS
LOW POWER CONSUMPTION
UP TO +22 dBm OUTPUT POWER
AVAILABLE FROM 2.8 - 40 GHz
OPERATING RANGE -55o TO +105oC

Go to top of page



 

 

APPLICATION
SATELLITE COMMUNICATIONS
CABLE TV LINKS (CATV)
LOCAL AREA NETWORKS (LAN)
GLOBAL POSITIONING SYSTEMS (GPS)
TEST EQUIPMENT
UP / DOWN CONVERTERS
POLICE RADARS
TRANSMITTER & RECEIVERS
DIGITAL RADIOS
MISSILE GUIDANCE
MILITARY, SPACE, COMMERCIAL
POINT TO POINT

Go to top of page



 

 

DESCRIPTION



DRO-1000 series Dielectric Resonator Oscillator (DRO) utilizes state of the art MIC to provide a highly stable, reliable and efficient signal source at microwave frequencies up to 40 GHz. The low profile and rugged construction provide excellent durability against harsh environmental conditions.


DRO-1000 series oscillator is designed using GaAs FET or BJT amplifier with series feedback at source and Dielectric Resonator at the gate. High gain, low-noise GaAs FETs/BJTs are biased positively or negatively at the gate to ensure minimum phase-noise. The device is carefully matched for maximum power, minimum phase-noise and Voltage standing-Ratio (VSWR). The oscillator is matched for maximum temperature stability and optimum negative resistance.


DRO-1000 series oscillator is buffered by cascaded low-noise driver and power amplifiers for minimum load pulling, maximum isolation and power. GaAs FET/BJT devices are directly attached to gold plated Kovar carriers to minimize shear effect and maximize heat sinking. Kovar carriers are soldered to the chassis to provide an efficient thermal junction and a stable structure for reduction of microphonics. To ensure oscillator stability over the full temperature range, high-Q low dielectric constant resonators are chosen with proper temperature coefficient to compensate for frequency drift. Where extreme stability is required, a miniature heater can be provided to ensure constant temperature and minimum drift.


DRO-1000 series provide several advantages over other microwave signal sources, such as Gunn Gravity Oscillators and Crystal Multiplier Chains. The table below offers a brief summary comparison of the other sources.


DRO-1000 series is internally voltage regulated to avoid reverse bias, frequency pushing, bias modulation and voltage transients. Mechanical frequency adjustment is provided for desired frequency setting within the bandwidth.

Go to top of page






 

SPECIFICATIONS
Model Number DRO-1000-XX.XX
Single Frequency 3 to 50.00 GHz
Mechanical Tuning Range 100 MHz
Electrical Tuning Optional
Power Output +13 dBm, up to +25dBm optional
Load VSWR, Maximum 2.0 : 1.0
Power Requirements +15, +12, +10 VDC, 90 mA
Power Variation +/- 0.5 dBm
Pushing 10 ppm/V Max.
Pulling (12 dB Return Loss) +/- 90 ppm Max.
Frequency Stability 4 ppm/oC
Phase Noise See Phase Noise Envelope
Spurious -85 dBc
Harmonics -25 dBc
Alarm Open Collector
Operating Temperature -55o to +105oC
Storage Temperature -55o to +125oC
Connectors SMA, Female
Size 2.25" x .93" x .67"
Finish Nickel

Go to top of page




 

PHASE NOISE ENVELOPE


Phase Noise Envelope



Go to top of page



 

BLOCK DIAGRAM





Go to top of page



 

OUTLINE DRAWING

For updated outline drawings, please check with the factory.








Go to top of page

14321 Chambers Road
Tustin, California 92780 USA
Phone: 714-505-0998 Fax: 714-505-0994
Email: info@microwave-dynamics.com